Acquisition of low surface recombination velocity on surface of p - type si 單晶低表面復(fù)合速度的獲得
Surface recombination velocity 表面復(fù)合速度
From the experiment results and the normalization results , the surface recombination velocities of silicon pn junction were obtained 通過(guò)測(cè)量結(jié)果和計(jì)算結(jié)果的歸一化比較,獲得了其表面復(fù)合速率。
Depending on the image method and point source approximation method , the physic model was established , and the formula of photo - current versus surface recombination velocity was obtained 導(dǎo)出了光電流與表面復(fù)合速率相應(yīng)關(guān)系的計(jì)算公式,確定了可進(jìn)行電量測(cè)量的實(shí)驗(yàn)裝置。
Key technologies and its mechanism for improving crystalline silicon solar cells in the scale manufacture have been researched in this thesis . after sioa surface passivation and forming gas treatment utilization in the scale manufacture , the surface recombination and series resistance of solar cells have been reduced while their open - circuit voltage , fill factor and efficiency improved 本論文研究了提高晶體硅太陽(yáng)電池效率規(guī)模化生產(chǎn)工藝技術(shù)的主要環(huán)節(jié)和相關(guān)機(jī)理,將sio _ 2表面鈍化、 forminggas處理用于規(guī)?;a(chǎn),降低了太陽(yáng)電池的表面復(fù)合速度和串聯(lián)電阻,提高了開(kāi)路電壓、填充因子和轉(zhuǎn)換效率。